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Unit XIV · Semiconductor electronics: materials, devices and simple circuits
10 min readConcept sheet2-mark effect of reverse bias, 3 or 5-mark circuits and characteristics, and practical viva questions on the I-V experiment

Junction diode in reverse bias, and the I-V experiment

Reverse bias joins p to − and n to +, raising the barrier to V₀ + V. Only a tiny reverse saturation current flows, until breakdown makes it rise sharply.

Reverse biasp-side to the negative terminal, n-side to the positive terminal
Effect on the junctionBarrier rises to (V₀ + V); the depletion region widens
Reverse currentA few μA, carried by minority carriers; almost independent of the applied voltage
Breakdown voltage (Vbr)The reverse voltage at which the reverse current suddenly rises sharply

What reverse bias does

In reverse bias, the applied voltage V adds to the barrier, so it becomes V₀ + V, and the depletion region widens. Majority carriers can no longer diffuse across. Only the few minority carriers are swept across by the field, giving a tiny current of a few microamperes (μA). This current is limited by the number of minority carriers, not by the voltage, so it stays nearly constant: the reverse saturation current. At the breakdown voltage Vbr, the reverse current suddenly becomes large. An ordinary diode can be damaged if it is used beyond this point.

Forward bias and reverse bias

Forward biasp to +, n to −. Barrier falls to V₀ − V; depletion region narrows. Large current (mA) of majority carriers. Low resistance.
Reverse biasp to −, n to +. Barrier rises to V₀ + V; depletion region widens. Tiny current (μA) of minority carriers. Very high resistance.

Activity: plotting the I-V characteristic of a p-n junction diode

Aim: to draw the I-V characteristic curve of a p-n junction diode in forward and reverse bias.

  1. 1
    Forward-bias circuit: join a low-voltage battery, a rheostat used as a potential divider, a protective resistor, the diode (p-side towards +) and a milliammeter in series. Connect a low-range voltmeter (for example 0 to 3 V) across the diode.
  2. 2
    Raise the voltage from zero in steps of about 0.1 V. Record the forward current I (mA) each time. Observe: the current stays near zero until about 0.7 V (Si), then rises steeply.
  3. 3
    Reverse-bias circuit: turn the diode round (p-side towards −). Use a higher-voltage battery, a microammeter in place of the milliammeter, and a voltmeter of larger range (for example 0 to 15 V).
  4. 4
    Raise the reverse voltage in steps of about 1 V and record the reverse current (μA). Observe: it stays tiny and almost constant. Do not go near the breakdown voltage.
  5. 5
    Plot both sets of readings on one graph: forward readings in the first quadrant (I in mA) and reverse readings in the third quadrant (I in μA). Write the two scales clearly.
  6. 6
    Record the result: the threshold voltage, the dynamic resistance from the slope of the forward curve, and the reverse current. Conclusion: the diode conducts well in one direction only.

How to draw the full I-V characteristic

  • Draw axes crossing at the origin. Label the right and up directions forward V (V) and forward I (mA).
  • Label the left and down directions reverse V (V) and reverse I (μA), and note that the two current scales differ.
  • First quadrant: draw the forward curve, flat until the threshold voltage, then rising steeply.
  • Third quadrant: draw a small, nearly flat reverse current just below the axis.
  • At a large reverse voltage, bend the curve sharply downward and mark that voltage Vbr.

Worked example: forward and reverse resistance

Problem

At a reverse voltage of 10 V, a silicon diode passes 1 μA. At a forward voltage of 0.8 V, it passes 20 mA. Compare its resistance (V/I) in the two cases.

Working
  1. Reverse: R = V/I = 10 V ÷ 1 × 10⁻⁶ A = 1 × 10⁷ Ω (10 MΩ).
  2. Forward: R = 0.8 V ÷ 0.020 A = 40 Ω.
  3. Ratio = 1 × 10⁷ ÷ 40 = 2.5 × 10⁵.
Answer

Reverse resistance 10 MΩ is about 2.5 lakh times the forward resistance of 40 Ω

In real life

Because a diode passes current only one way, it is used as a wrong-way battery guard in torches, toys and remote controls. If the cells are put in backwards, the diode is reverse biased and blocks the current, protecting the circuit.

Exam angle

2 marks: “How does the width of the depletion region change in reverse bias? Why is the reverse current almost independent of the applied voltage?” It widens, since the barrier rises to V₀ + V. The reverse current is carried by the few minority carriers, whose number does not depend on voltage.

3 marks: “Draw the circuit used to study the reverse-bias characteristic of a p-n junction diode and the curve obtained. What is meant by breakdown voltage?” Battery, rheostat, diode with p to −, microammeter in series, voltmeter across the diode. Small constant current in the third quadrant, sharp rise at Vbr: the reverse voltage at which current rises suddenly.

2 marks: “In the I-V experiment, why do we use a milliammeter in forward bias but a microammeter in reverse bias?” Forward current is a few milliamperes, while reverse current is only a few microamperes, too small to read on a milliammeter.

Remember it

Reverse means Resist: p to minus, barrier up, depletion wider, only microamperes leak through.